掺杂肖特基节形成等离子体半导体激光器的研究

项目名称： 掺杂肖特基节形成等离子体半导体激光器的研究

项目编号： No.11304181

项目类型： 青年科学基金项目

立项/批准年度： 2014

项目学科： 数理科学和化学

项目作者： 李俣

作者单位： 山东大学

项目金额： 25万元

中文摘要： 为解决现代光纤通信领域中，单模半导体激光器易受外界干扰、输出光波长不稳定等重要问题，在本项目中，我们将基于法布里-波罗（Fabry-Perot）纵向腔体结构，通过纵向非周期表面刻槽等多种方法，在肖特基节（Schottky contact）上直接产生等离子体模式，从而最终得到具有高边模抑制比的单模光通信用半导体激光器。纵向表面刻槽的设计方式，旨在器件制备时，避免进行二次外延生长和使用光隔离器，从而降低器件成本。利用掺杂在肖特基节上直接产生等离子体模式，可以有效提高电光转换效率，同时SPP的特殊电子-光子相互作用效应，可以将激光器的尺寸缩小至微米/纳米量级，使我们设计的单模器件的可集成度，比现有全介质材料的激光器提高4-6个数量级。本项目通过对激光器器件进行模拟和仿真，将深入探索此类新型结构和材料的单纵模激光器物理特性，为促进相关光器件的研究和发展，提供重要的理论基础。

中文关键词： 肖特基节；反向掺杂；半导体激光器；尖端效应；表面等离子体

英文摘要： New types of lasers using the Fabry-Perot(FP) cavity with longitudinal non-periodic etchings are to be studied. Single-mode miniaturaturized semiconductor laser with high side-mode suppression ratio (SMSR), which can also be immune to the heavy optical feedbacks in fibre-optic communication networks, will be highly valuable for both research and industry. To combine the surface plasma polariton (SPP) effect into the laser design, which can significantly reduce the device's dimension to a few microns, the single-mode SPP laser is studied on the Schottky contact in the cross-section direction of the laser. This can enable the possibility of directly generating SPP by semiconductor and metal materials, with no resort to the dielectric isolations. Therefore, improvements over both size and mode selectivity for the device around 1310~1550nm wavelength range will further expand the device applications in the area of integrated optics and fiber communication networks. Throughout the design, modeling and simulation procedures, we can obtain insightful and practical knowledge about the combination of noval structures with the SPP material for new laser designs. It also enables us to further improve the device over possible problems, such as the high metal absorption loss and mirror gain reduction issues.

英文关键词： Schottky diode；inverse doping；semiconductor laser；tip effect；surface plasmon polariton