功率SOI-LIGBT器件热载流子退化机理及寿命模型研究

项目名称： 功率SOI-LIGBT器件热载流子退化机理及寿命模型研究

项目编号： No.61204083

项目类型： 青年科学基金项目

立项/批准年度： 2013

项目学科： 信息四处

项目作者： 孙伟锋

作者单位： 东南大学

项目金额： 26万元

中文摘要： 功率SOI-LIGBT器件具有高输入阻抗、低导通电阻及全介质隔离等优点，将在More than Moore的半导体技术发展方向上发挥重要作用。近年来，功率SOI-LIGBT器件的电学性能已大幅提升，但以热载流子效应为代表的可靠性问题却依然非常严重。由于SOI-LIGBT器件存在相互影响的电子和空穴两种导电载流子，故其热载流子效应复杂，内在机理不明确，器件寿命模型缺失。本项目将在课题组前期对静态应力下SOI-LIGBT器件热载流子退化机理的研究基础上，深入研究不同器件结构参数、不同动态应力、关态阳极灌电流应力及环境温度等因素对功率SOI-LIGBT器件热载流子退化的影响并揭示其内在机理；在此基础上，建立一套完整的功率SOI-LIGBT器件热载流子退化寿命模型，预测其工作寿命。本项目的研究将为研制新型的长寿命功率SOI-LIGBT器件及相关功率集成电路提供理论指导。

中文关键词： 功率绝缘栅双级型晶体管；高压可靠性；热载流子效应；绝缘体上硅工艺；

英文摘要： Power SOI-LIGBT devices, owning the high input impedance, low on-resistance and full dielectric isolation, will play an important role in the semiconductor technology development of the More than Moore. In recent years, the electrical performance of the SOI-LIGBT device has been improved dramatically, but the reliability issues, taking the hot carrier effect for representative, are still serious. Because there are two kinds of interactive conductive carriers (hole and electron) existed in the SOI-LIGBT device, the hot carrier effect is complicated, the inner mechanism is unclear, and there is also no lifetime model of the SOI-LIGBT. Based on our earlier research on the hot carrier degradation mechanism of the SOI-LIGBT device under the static stress, this project will further investigate the influence upon the hot carrier degradation of the SOI-LIGBT from the different structural parameters, different dynamic stress, exterior anode striking current stress under the off-state, ambient temperature and so on, and will also suggest the inner degradation mechanism. In terms of these research results, a complete lifetime model on the hot carrier degradation of the power SOI-LIGBT will be established to forecast the working lifetime of the device. This project will make the theoretical foundation for developing the nov

英文关键词： power insulated gate bipolar transistor；high voltage reliability；hot carrier effect；silicon on insulator；