载能重离子在InN、InGaN薄膜中引起辐照效应的研究

项目名称： 载能重离子在InN、InGaN薄膜中引起辐照效应的研究

项目编号： No.11305081

项目类型： 青年科学基金项目

立项/批准年度： 2014

项目学科： 数理科学和化学

项目作者： 张利民

作者单位： 兰州大学

项目金额： 30万元

中文摘要： InN和InGaN是新型的氮化物半导体材料，对于发展新一代的电子和光电子器件具有广阔的应用前景。离子束技术是半导体材料加工与改性的重要手段，然而当前关于InN和InGaN离子束辐照效应的研究正处于初始阶段，极大的限制了离子束技术在InN和InGaN中的应用。本项目拟分别使用动能为几MeV的重离子和几十至几百MeV的快重离子辐照InN和InGaN薄膜，研究辐照引起薄膜结构、光学和电学性质的变化。其中，拟通过对几MeV重离子辐照的研究，揭示InN和InGaN在进行离子注入时主要由核碰撞效应而导致的损伤演化过程，为离子注入技术在InN和InGaN中的应用提供研究基础。另一方面，拟通过对快重离子辐照的研究，了解InN和InGaN在快重离子入射时主要由强电子激发效应而引起的损伤现象，探讨利用快重离子来加工InN和InGaN的可能。本项目的研究将对InN和InGaN材料离子束技术的应用具有重要意义。

中文关键词： InN和InGaN；辐照效应；载能重离子；；

英文摘要： InN and InGaN are new kinds of nitride semiconductor materials, which have broad application prospects on the development of new electronics and optoelectronics. The ion beam technique is crucial for the process and modification of semiconductor materials. However, the study of ion beam-induced irradiation effects in InN and InGaN is still in the initial stage at present,which hinders the application of the ion beam technique on InN and InGaN materials. In this research subject, the InN and InGaN films will be irradiated by heavy ions with energies of several MeV and swift heavy ions with energies of several tens to several hundreds MeV, respectively. And the changes of the structures and the optical and electrical properties of the films will be studied. By the study with the irradiation of several MeV heavy ions, the damage evolution in InN and InGaN under ion implantion mainly via the ballistic effects will be revealed, which will contribute to the application of the ion implantation technique on InN and InGaN materials. On the other hand, by the study with the irradiation of swift heavy ions, the irradiation damage in InN and InGaN induced by swift heavy ions mainly via electronic excitation effects will be investigated, and the promising application of the swift heavy ion on the process of InN and InGaN mat

英文关键词： InN and InGaN；Irradiation effects；Energetic heavy ions；；