异质结构的SiC基一维半导体纳米材料的可控合成与光电性能研究

项目名称： 异质结构的SiC基一维半导体纳米材料的可控合成与光电性能研究

项目编号： No.61274012

项目类型： 面上项目

立项/批准年度： 2013

项目学科： 无线电电子学、电信技术

项目作者： 杜银霄

作者单位： 郑州航空工业管理学院

项目金额： 80万元

中文摘要： SiC异质纳米结构在继承SiC纳米材料众多优异性能的基础上，又集合了其它材料的优异性质，具有非常广阔的应用前景，其相关基础和应用研究已成为当前国际纳米科技最新的研究热点之一。本申请项目根据国际纳米科技的发展趋势，围绕研制具有重要应用前景的光电功能器件，以溶剂热法为合成手段，开展SiC异质纳米结构的可控生长、光电特性以及纳米器件单元构建研究。重点探索SiC/MWCNT、SiC/C、SiC/ZnO、SiC/CdS、SiC/Au一系列异质结构的SiC基一维半导体纳米材料的可控生长工艺和机理，实现其化学组分、结构、尺寸、形貌的精确调控；并系统研究这些纳米材料的微观结构、光学和电学特性，确定微观结构对光电性能的影响；同时采用第一性原理对这些纳米材料进行几何结构优化和电子结构的计算，实现光电功能设计与结构设计之间统一对应，并研制具有应用前景的SiC异质纳米结构器件单元，拓展纳米器件制备技术的应用空间。

中文关键词： SiC；纳米材料；异质结构；；

英文摘要： Recently, the fundamental and applied research on silicon carbon (SiC) nanoheterostructures has attracted extensively attention due to the added benefit of multifunctionality or new properties arising from combining different materials. According to the development of the nanoscience and nanotechnology, it is planned to synthesize novel SiC-based one-dimensional semiconductor nanomaterials with heterostructures by a facile low-temperature solvothermal method，and investigate the controllable synthesis and photoelectric properties of SiC nanoheterostructures, and design the nanoheterojunction devices. It is stressed to develop the promising photoelectric functional devices in this project. The growth technique and mechanism for the controlled synthesis of SiC-based one-dimensional semiconductor nanomaterials with heterostructures including SiC/MWCNT、SiC/C、SiC/ZnO、SiC/CdS、SiC/Au will be extensively explored, which is expected to accurately control the chemical composition, structure, morphology and size of SiC-based one-dimensional semiconductor nanomaterials with heterostructures. The microstructure, optical and electrical properties of SiC-based one-dimensional semiconductor nanomaterials with heterostructures will be systemically investigated, which is expected to find the relation between the microstructure and

英文关键词： SiC；Nanomaterials；Heterostructures；；