有机薄膜晶体管中接触长度对截止频率的调控机制研究

项目名称： 有机薄膜晶体管中接触长度对截止频率的调控机制研究

项目编号： No.51503167

项目类型： 青年科学基金项目

立项/批准年度： 2016

项目学科： 一般工业技术

项目作者： 王宏

作者单位： 西安电子科技大学

项目金额： 20万元

中文摘要： 有机电子器件由于其柔性低成本等优势在下一代可穿戴式电子领域具有广泛的应用前景。有机薄膜晶体管是有机电子的核心器件，截止频率是表征有机薄膜晶体管工作速度最重要的参数，提高有机薄膜晶体管的截止频率对提高有机电子的工作速度至关重要。目前主要通过提高器件迁移率及减小沟道尺寸来提高截止频率，然而，栅电极与源漏电极的交叠长度（接触长度）对器件的截止频率具有重要影响。本项目针对缺乏研究的有机晶体管中接触长度对截止频率的影响规律，将从有机晶体管制备分析结合器件模拟等方面系统深入地研究有机薄膜晶体管中接触长度对截止频率的调控机制，建立有机薄膜晶体管中接触长度对截止频率的调制物理模型，研究有机半导体材料种类、器件结构、柔性器件形变等因素对有机薄膜晶体管中截止频率对接触长度依赖关系的影响规律，实现高频率柔性有机薄膜晶体管，开发相应的具有自主知识产权的核心技术，为实现高频率有机薄膜晶体管及其电路奠定基础。

中文关键词： 有机半导体；有机薄膜晶体管；截止频率；接触长度

英文摘要： Organic electronic devices are promising for next generation wearable electronic systems applications due to their flexibility and low cost. Organic thin film transistor (OTFT) is one of the most important device in organic electronics. The cutoff frequency of OTFT is the parameter which reflects the operation speed of the devices. Improve the cutoff frequency of OTFT will effectively increase the operation speed of organic electronics. The mainly methods for improve cutoff frequency is increasing the mobility and scaling down the channel length of OTFTs. However, the overlap length of source/drain and gate electrodes (contact length) has important effect on the cutoff frequency of OTFTs, but the contact length dependent cutoff frequency of OTFTs is lack of study. This project will systemically study the modulation mechanism of contact length on cutoff frequency of OTFTs both from experiments and theory. In addition, the organic semiconductor materials, device structures and the flexible devices deformation on the performance of contact length dependent cutoff frequency of OTFTs will be studied. The successful implementation of this project will provide important guidelines for the realization of high frequency flexible OTFTs and also can promote the development of high frequency OTFTS and organic circuits in our country.

英文关键词： Organic semiconductor;organic thin film transistors;cutoff frequency;contact length