硅基GaN功率开关器件阻断特性的研究

项目名称： 硅基GaN功率开关器件阻断特性的研究

项目编号： No.61204099

项目类型： 青年科学基金项目

立项/批准年度： 2013

项目学科： 信息四处

项目作者： 王茂俊

作者单位： 北京大学

项目金额： 28万元

中文摘要： 由于优良的材料物理特性，以GaN基高迁移率晶体管（HEMT）为代表的第三代宽禁带半导体器件，特别是有望实现大规模生产的硅基AlGaN/GaN HEMT器件正成为构建下一代高效率大功率开关器件的理想技术平台。本申请项目以探索硅基GaN HEMT击穿机制、发展提高器件击穿电压新技术为目标，开展硅基GaN HEMT器件阻断特性的研究，为GaN高压功率开关器件及电路的研究做技术储备。主要研究内容包括高性能硅基GaN HEMT的工艺制备、低电场下器件漏电机理的研究、器件击穿机制的研究、器件耐压新结构的设计和实现等。本项目申请人一直从事GaN基材料和器件的研究，在GaN HEMT特别是普通衬底上HEMT器件击穿机制的研究上取得了一定成果并积累了经验，在此基础上进一步研究硅基GaN HEMT的阻断特性。本项目的研究目标和内容均是当前国际上GaN HEMT器件以及功率开关领域的研究热点。

中文关键词： 氮化镓；硅衬底；耐压；缓冲层；

英文摘要： Wide band gap GaN-based high electron mobility transistors, especially AlGaN/GaN HEMT on silicon substrate is emerging as a promising technology platform to build high-efficiency and compact high-voltage power switches owing to the superior properties of the GaN-based materials and foreseeable high-volume production on large diameter silicon substrate. The main work of this application is to study the blocking characteristics of GaN HEMT on silicon substrate, aiming to reveal the breakdown mechanism of GaN HEMT on Si and develop the corresponding technology to boost the breakdown voltage of the device. The research points include: fabrication of high performance GaN HEMT on silicon substrate, leakage mechanism of the device at low electric field, breakdown mechanism of the device, new structures to enhance the breakdown voltage, etc. The applicant of this project has been engaged in research of GaN based materials and devices. He has good experience in device physics and technology of GaN-based HEMT and got some achievement on the breakdown mechanism of GaN HEMT on conventional substrate. The application is an extension of his previous work, which focus on the blocking characteristics of GaN HEMT on silicon substrate. The target and content of the application are the hot area in research on GaN-based HEMT and po

英文关键词： GaN；Si Substrate；Breakdown Voltage；Buffer；trap