铁电薄膜微图形化及其电性能相关性研究

项目名称： 铁电薄膜微图形化及其电性能相关性研究

项目编号： No.61204088

项目类型： 青年科学基金项目

立项/批准年度： 2013

项目学科： 信息四处

项目作者： 戴丽萍

作者单位： 电子科技大学

项目金额： 28万元

中文摘要： 集成铁电器件的发展趋势是高密度、微型化、高性能，这就对铁电薄膜的微细图形提出了更高的要求。因此制备高性能的铁电器件，除了制备优良的铁电薄膜以外，其微细图形制备也成为关键技术之一，铁电薄膜微图形制备对铁电器件的发展具有重要的理论意义和实用价值。然而PZT、BST等铁电薄膜微图形化还存在许多未克服的难点，铁电相的BZN薄膜的微图形化报道更是甚微，更不用说微图形化与其电性能相关性的研究，这与日益发展的铁电器件集成度不断要求提高很不匹配。本科研小组近年来预研结果表明当今铁电薄膜微图形化最大挑战是获得无损伤的关键技术即最优化的相互匹配刻蚀技术和后期去胶工艺参数；本课题在光刻的基础上，拟采用ICP等离子源的RIE技术，对薄膜表面成分和化学态分析，探讨各工艺气体对薄膜的刻蚀机理；研究工艺参数对其微图形化及性能相关的影响规律；从而解决器件制备过程中产生的成品率低的问题。

中文关键词： 刻蚀；微图形；介电性能；光刻；薄膜

英文摘要： The development trend of the integrated ferroelectric devices is the high-density, miniaturized, high performance, which asked for higher requirements for the micro-graphics of ferroelectric thin films. Therefore, for the purpose of preparing the high-performance ferroelectric devices, in addition to the excellent preparation of ferroelectric thin films, the preparation of micro-graphics has also become one of the key technologies. The ferroelectric thin film micro-graphics preparation on the development of ferroelectric devices has important theoretical significance and practical value. PZT, BST ferroelectric thin film micro-graphical, however, there are still much difficulty to overcome. Even, there is almost no report about BZN thin films of ferroelectric phase micro graphical, not to mention the research of the correlation of micro-graphical and its electrical properties, which can not match the requirements of increasing development of ferroelectric devices integration. Our research in recent years show that the biggest challenge of ferroelectric thin film micro-graphical is to get no damage key technology, that is to obtain the optimized and matched etching techniques and post-stripping process parameters. The research topic on the basis of the lithography intend to use RIE technology with ICP plasma sour

英文关键词： Etching；Micro-graphical；Dielectric properties；Lithography；thin film