氧化铈缓冲层的稳定化生长与调控机理研究

项目名称： 氧化铈缓冲层的稳定化生长与调控机理研究

项目编号： No.51202201

项目类型： 青年科学基金项目

立项/批准年度： 2013

项目学科： 无机非金属材料学科

项目作者： 金利华

作者单位： 西北有色金属研究院

项目金额： 25万元

中文摘要： YBCO涂层导体的大规模应用依赖于其制备成本的降低,化学溶液法是制备低成本涂层导体的主要技术。本项目通过研究化学溶液法制备(001)晶面取向的CeO2缓冲层形核和生长机制，探索元素掺杂对CeO2缓冲层生长行为及裂纹形成的影响和晶格应变对CeO2缓冲层生长行为及微观组织的作用规律，建立氧空位浓度与裂纹形成的关系模型，揭示影响生成高质量CeO2缓冲层的主要因素，阐明化学溶液法制备(001)晶面取向CeO2缓冲层的稳定生长机制，达到对CeO2缓冲层的生长调控。并在此基础上研究CeO2缓冲层对超导层微观组织和超导性能的影响规律。研究结果将为低成本涂层导体的缓冲层制备提供技术基础支撑。

中文关键词： 涂层导体；氧化铈；缓冲层；生长；调控

英文摘要： Large-scale application of YBCO coated conductors depends on the reduction of its production costs. Chemical solution method is a key technology for developing of coated conductors. This project aims to study nucleation and growth mechanism of (001)-oriented ceria buffer layers by chemical solution method. The influence of elements doping for growth behavior and the crack formed on CeO2 buffer layers and the role of lattice strain for growth behavior and microstructure on CeO2 buffer layer are explored. The relationship between oxygen vacancy concentration and formation of crack is established.The main factors on preparation of high quality CeO2 buffer layers will be revealed. It is elucidated that the stably growth mechanism of (001)-oriented CeO2 buffer layers by chemical solution methods in order to tune the growth of CeO2 buffer layers. And based on above conclusion, the influence law of CeO2 as buffer layer on microstructure and superconducting properties of superconducting layer will be investigated. The results will lay the foundations on buffer layers for coated conductor of low-cost preparation technologies.

英文关键词： coated conductors；CeO2；buffer layer；growth；tune