基于独立场效应管调控的碳纳米管场发射阵列的研究

项目名称： 基于独立场效应管调控的碳纳米管场发射阵列的研究

项目编号： No.51202027

项目类型： 青年科学基金项目

立项/批准年度： 2013

项目学科： 无机非金属材料学科

项目作者： 李驰

作者单位： 国家纳米科学中心

项目金额： 25万元

中文摘要： 碳纳米管场发射电子源有很好的应用前景，但目前其大电流发射能力、电流均匀性和稳定性以及大电流的调制灵敏度等性能仍不能满足大功率器件的需求。为进一步提高碳纳米管阴极的上述性能，本项目创新性地提出一种基于绝缘硅衬底（SOI）的独立场效应管调控的碳纳米管场发射阵列三极结构。该结构特点为：1）场发射阵列中每一根碳纳米管都串联了一个独立的场效应管，这可以平衡每根碳管的发射电流，进而提高阵列的总体电流及电流稳定性；（2）栅极既可调制场效应管的源漏电流，又可调制碳纳米管尖端电场，以此提高电流调制灵敏度；3）基于SOI衬底制备，工艺相对简单。本项目将通过理论分析和模拟计算阐明场效应管对单根碳纳米管的限流保护机制和对碳纳米管阵列发射电流的平衡作用，进而探索该结构实现大电流均匀发射的机理；然后优化设计器件结构，并研究器件的制备工艺和场发射性能。本项目的研究为场发射器件的发展开辟了新的道路。

中文关键词： 场发射电子源；碳纳米管；石墨烯；栅极；大电流

英文摘要： Carbon nanotube cold cathodes have promising applications,however,their electron emission ability, emission current uniformity and stability, and sensitivity of gate modulation still can not satisfy the requests of large power devices. To improve above performances of carbon nanotubes array, this project presents an Individually Transistor-Ballasted Carbon Nanotube Arrays on SOI (silicon on insulator) substrate. This structure has following advantages: (1)each carbon nanotube in the array is connected in serise with a transistor, which will redistribute the emission current of the array, improve the current density、stability and uniformity,(2)gate could modulate both drain-source current of transistor and electric field around carbon nanotube tip, consequently the sensitivity of gate modulation is improved,(3) the structure is fabricated on SOI substrate, which simplifies the fabrication process.Based on the computer simulation and theory analysis, the emission current limitation effect of transistor on carbon nanotubes, the redistribution function of the emission current by the transistors array, and the mechanism of large current emission will be illustrated. Based on the design and optimization of the device structure, the devices will be fabricated and tested. This project will open a new way for the researc

英文关键词： field emission electron source；carbon nanotubes；graphene；gate；large current