新型红外探测器应用相关的GaSb单晶杂质、缺陷及物性

项目名称： 新型红外探测器应用相关的GaSb单晶杂质、缺陷及物性

项目编号： No.61474104

项目类型： 面上项目

立项/批准年度： 2015

项目学科： 无线电电子学、电信技术

项目作者： 赵有文

作者单位： 中国科学院半导体研究所

项目金额： 82万元

中文摘要： 锑化镓单晶是研制II类超晶格中长波红外探测器、热光伏器件等的重要基础材料，随着新型红外探测技术的不断发展和实用化，近来有关GaSb材料的缺陷和杂质、光电性能等受到了重视和研究。本项目拟重点研究GaSb晶体中碳、氧、氢等杂质对晶体的电学性质的影响、杂质与缺陷相互作用等。 研究GaSb晶体中本征受主缺陷与杂质的相互作用、缺陷和杂质复合体以及缺陷和杂质的电学补偿对材料电学性能和光学性能的影响作用和调控途径等。针对不同掺杂的GaSb单晶开展深能级缺陷研究，旨在进一步阐明本征缺陷的属性和形成规律，分析评价缺陷对材料电学性质和光学性质的影响作用。研究GaSb单晶高温固态杂质扩散行为，掌握本征缺陷对扩散的影响作用和机理。通过对GaSb衬底表面的残留杂质、损伤缺陷、残留氧化层及其化学状态、真空热分解特性等的研究，促进晶片表面制备技术及外延材料质量和器件性能的提高。

中文关键词： 锑化镓；单晶；杂质；缺陷；红外探测器

英文摘要： GaSb single crystal is a very important material in fabrication of type II superlattice infrared detector and thermal photovoltaic devices. Research on the impurities, defects and electro-optical properties of GaSb are receiving considerable attention as the development and practical application of new type infrared detection technology. This project intends to focus on the electrical property influence of carbon, oxygen, hydrogen impurities and the interaction between impurities and defects. We need to analyze the controlling approach and photoelectric properties influence on GaSb material from interaction of native acceptor related defects and impurities, defects and impurity complex, electrical compensation of defects and impurities. To further clarify the property and forming regularity of native defects, research on deep level defects need to be carried out according to different doping GaSb samples. The research on impurity diffusion behavior in order to master the mechanism of native defect diffusion is also very necessary. The improvement of GaSb wafer surface quality has an important influence on the performance of epitaxy devices, so the studies on surface residual impurities, surface defects and property of native surface oxide are the same critical.

英文关键词： GaSb;single crystal;impurities;defects;infrared detector