磁受限半导体异质结构中δ-掺杂与量子调控研究

项目名称： 磁受限半导体异质结构中δ-掺杂与量子调控研究

项目编号： No.61464004

项目类型： 地区科学基金项目

立项/批准年度： 2015

项目学科： 无线电电子学、电信技术

项目作者： 卢卯旺

作者单位： 桂林理工大学

项目金额： 46万元

中文摘要： 采用理论分析和数值计算相结合的方法，研究实验上已实现的或可以实现的三种典型磁受限半导体异质结构（磁垒纳米结构、复合磁电垒纳米结构、含自旋-轨道耦合磁垒纳米结构）中的δ-掺杂，及其对磁受限半导体异质结构中三种重要量子效应（波矢过滤效应、巨磁阻效应、自旋过滤效应）的影响，探索半导体纳米结构量子调控的新途径。本项目拟采用改进了的转移矩阵法（ITMM 方法）数值求解电子的薛定谔方程，计算电子的透射系数，利用Landaur-Büttiker超微结构电导理论（LBT方法）由透射系数计算电导，进而给出磁阻(MR)比率和电子的自旋极化度，从而揭示δ-掺杂对磁受限半导体异质结构中量子效应影响的一般规律，阐明利用δ-掺杂技术、从结构上实现磁受限半导体异质结构量子调控的原理，期望获得一种半导体纳米结构量子调控的有效方法与一类纳米电子器件，为新型可控半导体电子器件的设计、开发与应用提供理论指导。

中文关键词： 磁受限半导体异质结构；δ-掺杂；量子调控；纳米电子器件

英文摘要： Utilizing the theoretical analysis together with the numerical calculation, the δ-doping and its influence on three kinds of significant quantum effects (the wave-vector filtering effect, the giant magnetoresistance effect and the electron-spin filtering effect) are investigated in three classes of typical magnetically restricted semiconductor heterostructures (the magnetic-barrier nanostructure, the hybrid magnetic-electric-barrier nanostructure and the magnetic -barrier nanostructure with the spin-orbit coupling, which have been actualized or can be actualized in experiments), to explore the new way to realize the quantum manipulating in the semiconductor nanostructure. This project intends to calculate the transmission coefficient for electrons tunneling through the realistic magnetically restricted semiconductor heterostructure, by numerically solving the Schr?dinger equation, with the help of the improved transfer-matrix method (ITMM). By means of the well-known Landaur-Büttiker theory (LBT),the electronic conductance at zero temperature can then be calculated by numerically integrating the transmission coefficient. And then, the magnetoresistance (MR) ratio and the degree of the electron-spin polarization can be given accordingly.Thus,the generalized rule of the influences of the δ-doping on quantum effects in magnetically restricted semiconductor heterostructures can be revealed. The basical principle to structurally realize the quantum manipulating in magnetically restricted semicondutor heterostructures by utilizing the δ-doping technique can be elucidated. It can be expected that, an effective quantum manipulating method to the semiconductor nanostructure can be achieved by the actualization of this project, and a type of nanoelectronic devices also can be obtained, which will provide some theoretical instructions in designing, exploiting and applying new-pattern and controllable semiconductor electronic devices.

英文关键词： Magnetically restricted semiconductor heterostructure;The δ-doping;Quantum manipulating;Nanoelectronic device