金属-半导体界面的自旋轨道耦合效应研究

项目名称： 金属-半导体界面的自旋轨道耦合效应研究

项目编号： No.11204178

项目类型： 青年科学基金项目

立项/批准年度： 2013

项目学科： 物理学I

项目作者： 李重要

作者单位： 上海理工大学

项目金额： 25万元

中文摘要： 自旋轨道耦合作用为人们提供了一种利用电学方式调控自旋的方法，在现今的自旋电子学领域中受到广泛关注。本项目拟利用第一性原理计算和模型哈密顿量方法研究金属-半导体界面的自旋轨道耦合效应。有些金属表面态尽管存在着较强的自旋轨道耦合作用，但这些表面态常常伴随着大量自旋简并的状态，使得表面态的自旋轨道耦合效应难以得到应用。本项目拟将超薄金属膜置于传统半导体和有机半导体衬底上，在这种金属-半导体界面中抽取出具有较强自旋轨道耦合作用的金属表面态，实现类似于半导体二维电子气的自旋轨道耦合作用，并利用外加电场实现对该作用的调控。此外，基于自旋轨道耦合对电子自旋的调控作用，希望能够实现具有一定功能的自旋量子器件，如自旋开关、自旋过滤器等。本项目将有助于增进人们对自旋轨道耦合作用的认识及其调控自旋状态的实际运用，推进自旋电子学的发展。

中文关键词： 自旋-轨道耦合效应；能带结构；金属薄膜；石墨烯；二硫化钼

英文摘要： Spin-orbit coupling (SOC) effect has attracted extensive attention in spintronics since it allows for purely electric manipulation of the electron spin.The first principles calculations and the Hamiltonian models would be used to investigate the SOC effect in metal-semiconductor interfaces in this project. Although there are strong SOC effect in some metallic surface states, the surface states are usually buried in a high density of spin-degenerated metallic bands and hence would not exhibit detectable spin-dependent transport properties. In this project, we try to deposite ultrathin metal films on conventional semiconductors and organic semiconductors, and try to extract the surface states with strong SOC in the metal-semiconductor interfaces. We hope the conventional semiconductor heterostructures can be replaced by the interface structures to realize the two-dimensional elecron gases with the strong SOC effect which can be modulated by electric field. In addition, based on the SOC manipulation of the electron spin, we try to design the spin devices with special spin transport properties, such as spin switch and spin filter.This project would be helpful for understanding the SOC effect and promoting its applications in spintronics, and prompt the development of spintronics.

英文关键词： spin-orbit effect；band structure；metal film；graphene；molybdenum disulfide