硅基长波长光电集成接收机的关键技术及相关理论研究

项目名称： 硅基长波长光电集成接收机的关键技术及相关理论研究

项目编号： No.61474081

项目类型： 面上项目

立项/批准年度： 2015

项目学科： 无线电电子学、电信技术

项目作者： 谢生

作者单位： 天津大学

项目金额： 89万元

中文摘要： 在短距离通信中，电互连已无法满足系统对带宽的要求，光互连取代电互连已成为必然趋势。硅基光电子技术可有效降低光传输的成本，实现短距离光通信，因而一直是光电集成领域的研究热点。然而受硅材料特性的限制，标准CMOS工艺无法实现长波长光探测，且探测器与接收机前端电路的协同设计和集成尚未得到彻底解决。针对限制硅基长波长光电集成接收机发展的关键科学问题，本项目拟开展以下研究：1、研究硅基锗探测器的浅结掺杂注入分布与内建电场的关系，研究锗探测器与硅基光波导的耦合作用机理和光生载流子的超快输运模型，研制零偏压完全响应的SOI基锗波导探测器；2、研究降低光接收机前端电路噪声，扩展工作带宽的相关理论和方法；3、研究探测器和接收机前端电路的协同设计与集成，实现长波长响应的硅基光电集成接收机。本项目的研究有望在SOI基锗波导探测器及其光电集成接收机方面取得进展，为硅基光电集成芯片的发展提供理论积累和技术解决方案。

中文关键词： 光接收机；波导集成探测器；光电集成回路；光互连

英文摘要： Electrical interconnection is not fast enough to satisfy the bandwidth demand for short distance communication with continuous increase in data traffic, so it has been a inevitable trend that optical interconnection supplants electrical interconnection. Silicon-based optoelectronic integration technology has been a research focus in recent 10 years for it could dramatically reduce the cost of optical interconnection. Due to the material properties of silicon, the long-wavelength photodetector can not be realized in standard CMOS process. Moreover, the cooperative design and integration between photodetector and the front-end circuits of optical receiver is not completely solved. The realization of long-wavelength optical receiver based on standard silicon process is still a challenging problem. Considering the current issues of silicon-based optoelectronic integrated receiver and our foundation in this field, the research on the key technologies and theories of silicon-based long-wavelength optical receiver is proposed in this project. The main contents are as following: 1 The relationship between build-in electric field of gemanium intrinsic region and implanted dopant distribution in P-type/N-type regions will be studied, and the coupling mechanism between gemanium detector and silicon-based waveguide will be analysed. Furthermore, the ultrafast transport mechanism for photo-generated carriers will be modelled, and a SOI-based germanium waveguide-integrated detector with complete response under the condition of 0V bias will be designed and fabricated. 2 The theories and methods of reducing the circuit noise and extending the operation frequency for the front-end circuit of optoelectronic integrated receiver will be expored. 3 The methods for cooperative design and integration between the detector and the front-end cirucuit will be studied, and a high performance optoelectronic integrated receiver responsed for long-length light (1550nm) will be realized. The research of this project is expected to achieve progress on SOI-based germanium waveguide-integrated detector and long-length optical receiver, and provide a useful reference for the realization of large-scale optoelectronic intregrated circuits.

英文关键词： optical receiver;waveguide-integrated detector;optoelectronic integrated circuit;optical interconnection