超导薄膜与硅锗异质结相耦合的量子隧穿效应研究及器件制备方法探索

项目名称： 超导薄膜与硅锗异质结相耦合的量子隧穿效应研究及器件制备方法探索

项目编号： No.51307162

项目类型： 青年科学基金项目

立项/批准年度： 2014

项目学科： 电工技术

项目作者： 李晓娜

作者单位： 中国科学院电工研究所

项目金额： 26万元

中文摘要： 为满足太赫兹信号探测中高灵敏度、实用化器件的研发需求，突破硅锗异质结在高频信号检测器研制中结电阻与结电容设计的局限，提出利用超导薄膜辅助硅锗异质结，提高其低温下的量子隧穿器件性能、实现太赫兹信号探测的新方案。拟以硅锗异质结的能带分布与载流子迁移理论为基础，结合超导薄膜特性与温度场分布，研究超导薄膜辅助的基于量子隧穿效应的载流子输运规律；基于硅锗异质结反向二极管器件设计模型，研究超导薄膜与硅锗异质结相耦合的量子隧穿反向二极管器件的优化设计模型；在电子束退火制备MgB2超导薄膜工艺基础上，探索超导薄膜与硅锗异质结相耦合的微纳结构的电子束加工工艺，制备工作频率>0.1THz的超导薄膜反向二极管器件原型，研究器件的电压灵敏度、噪声等参数及其影响因素。本研究结果可用于指导深空探测、基础科学研究的太赫兹信号成像与频谱分析系统研制，在国家安全及医疗无损检测方面也具有广阔的应用前景。

中文关键词： 超导异质结；电子束退火加工；太赫兹信号检测；量子隧穿效应；

英文摘要： To address the challenge of the high sensitive practical detectors for THz frequencies, to breakthrough the limits of resistance and capacitance in Si/SiGe HBT devices for high frequencies' application, a new method of Si/SiGe HBT quantum tunneling assisted by superconducting film is proposed. The effort is based on the energy band distribution，the electron mobility theory for Si/SiGe HBT in cryogenic, superconducting properties and temperature distribution. The research is focused on the energy transmission by superconducting film and the mechanism of quantum tunneling effect with superconducting film and Si/SiGe HBT. We try to design a backward diode with Si/SiGe and superconducting film on the basis of the existed model and the theory of quantum tunneling effect assisted by superconducting film. We try to explore on the processing of the fabrication for the Si/SiGe device with superconducting film, which is based on Electron beam lithography and electron beam annealing for depositing the superconducting MgB2 thin films. The prototype of the device will be fabricated and the characters, like voltage sensitivity and NEP will be measured. The research will be benefit on the practical application for superconducting technology. It can help the imaging for THz frequencies on space exploration, basic scientific re

英文关键词： Superconducting heterojunctions；Electron beam annealing；Terahertz signal detecting system；Quantum tunneling effect；