基于宽禁带半导体SiC的中红外非线性光学材料

项目名称： 基于宽禁带半导体SiC的中红外非线性光学材料

项目编号： No.51272276

项目类型： 面上项目

立项/批准年度： 2013

项目学科： 一般工业技术

项目作者： 王刚

作者单位： 中国科学院物理研究所

项目金额： 83万元

中文摘要： 3-5μm中红外激光在激光通讯、红外遥感和微量气体探测等领域有着重要的应用。由于缺乏实用的能够实现中红外激光输出的固体激光工作物质，非线性光学频率变换成为目前获得高功率全固态中红外激光的主要途径。而目前采用的中红外非线性光学晶体的激光损伤阈值都很低，无法实现大功率激光的输出。宽禁带半导体SiC具有高激光损伤阈值、高热导率和较高的透过率等特性，有望在大功率中红外非线性光学频率变换方面获得实际应用。我们前期的计算也表明4H-SiC晶体可以满足中红外非线性光学频率变换的相位匹配条件。本项目以4H-SiC晶体的非线性光学性质为研究目标，系统研究4H-SiC晶体中光子的吸收和散射机制、激光损伤机制以及其在中红外非线性光学频率变换中的应用，力争研究出新一代的性能优良的中红外非线性光学材料。

中文关键词： 中红外激光；非线性频率变换；SiC；差频；光参量

英文摘要： 3-5 μm mid-infrared (MIR) laser sources are indispensable tools for a variety of applications in free-space communication, imaging, detection of trace gas and so on. Due to the lack of suitable solid state laser materials, nonlinear optical frequency conversions based on optical parametric oscillators/amplifiers or difference frequency generation starting from the near infrared sources have been developed to generate widely tunable MIR lasers. Now the most robust nonlinear optical crystals in MIR range, such as LiNbO3, KTiOPO4, AgGaS2, and ZnGeP2, suffer from low damage thresholds, which seriously limit the power of these systems. Wide band-gap semiconductor SiC with superior properties including high damage threshold, high thermal conductivity, and relatively high transmittance has a great potential for high power nonlinear optical applications. In this proposal, we will focus on the nonlinear optical properties of 4H-SiC crystal. The absorption and scattering of photons, laser damage in 4H-SiC and its application in nonlinear optical frequency conversion will be systematically investigated. The research will facilitate the new generation nonlinear optical material for high power, high performance MIR laser.

英文关键词： Mid-infrared laser；Nonlinear optical frequency conversion；SiC；Difference frequency generation；Optical parametric amplification