复合掺杂In2O3半导体的载流子浓度独立调控和磁性机理研究

项目名称： 复合掺杂In2O3半导体的载流子浓度独立调控和磁性机理研究

项目编号： No.10874136

项目类型： 面上项目

立项/批准年度： 2009

项目学科： 金属学与金属工艺

项目作者： 孙志刚

作者单位： 武汉理工大学

项目金额： 30万元

中文摘要： 作为一种具有丰富物理内涵和重要应用前景的信息功能材料，磁性氧化物半导体已成为自旋电子学这个新领域的研究热点。实现过渡族金属元素浓度和载流子浓度的独自调控对于研究氧化物半导体的磁性机理、探索获得高性能的磁性半导体有着重要的理论和实验意义。利用单一3d金属离子掺杂存在载流子浓度和掺杂元素浓度不可独立调节的问题，而空位浓度调控存在精确可控性不够和时效性等方面的问题，复合掺杂具有独立调节、稳定可控的特点。相对于过渡族金属元素的单一掺杂大量的研究和报导，目前复合掺杂研究工作和报道比较稀少。本研究选择集磁－光－电多种性能为一体的In2O3氧化物半导体为基，制备出载流子浓度、过渡族金属元素浓度独立可控的复合掺杂稀磁半导体。系统研究载流子浓度、过渡族金属元素浓度对样品电、磁性能的影响，研究复合掺杂氧化物半导体的磁性机制问题，探索具有高热力学稳定性、高居里温度、以及大磁距的氧化物半导体。

中文关键词： 磁性半导体；自旋电子学；In2O3；氧空位；掺杂

英文摘要： Magnetic oxide semiconductor, as an information functional material with rich physical meaning and important application, has become a new hot point in the field of spin-electronics. To realize theseparately adustment of the transition metals and carrier concentration has important theoretical and experimetal significance for the understanding of magnetic mechanism of the oxide semiconductor and exploration of the high performance magnetic semiconductors. The composited doping has the advantage of independent and controllable adjustment, while the single doping of 3d metallic ion has the problems such as unindependent adjustment of the carrier concentration and the concentration of doping elements, while the sole regulation of the vacancy density lack of precisement and effectiveness. Comparing with lots of the researches and reports about the single doping of transition metals elements, the composited doping is relatively scarce. In this research, dilute magnetic semiconductors composited doping with independent controllable of the carrier and transition metallic concentration was produced based on the In2O3 oxide semiconductor which is a collection of multiple characteriztion in magnetism-light-electrictiy . We have systemically researched the effect of the carrier and transition metallic concentration on the electrictiy and magnetic performance, investigated the magnetic mechanism of the composited doping oxide semiconductor, and explored the oxide semiconductor with high thermodynamic stability, high Curie temperature, as well as the large magnetic moment.

英文关键词： Magnetic oxide semiconductor; Spin-electronics; In2O3; Oxygen vacancy; Doping