SnS、SnSe、SnSxSe1-x纳米材料的可控制备与高压研究

项目名称： SnS、SnSe、SnSxSe1-x纳米材料的可控制备与高压研究

项目编号： No.11504028

项目类型： 青年科学基金项目

立项/批准年度： 2016

项目学科： 数理科学和化学

项目作者： 王秋实

作者单位： 渤海大学

项目金额： 24万元

中文摘要： 硫化锡（SnS）和硒化锡（SnSe）是具有层状结构的典型窄带隙IV–VI族半导体，在红外器件、Li电池阳电极、太阳能电池、热电/光电转换等领域具有广泛的潜在应用。本项目拟通过直流弧光等离子体方法制备尺寸和形貌可控的低维纳米SnS、SnSe、SnSxSe1-x。并采用金刚石压砧高压实验技术，对它们进行原位高压X光衍射、高压拉曼和高压荧光测量，系统地研究它们的晶体结构、能带、光学和电学性能等随压力的变化规律，结合理论计算模拟，从原子角度认识压力对这类层状半导体纳米材料的晶体结构与物理性质的影响规律，揭示不同形貌和尺寸对其结构稳定性和相变规律的影响。通过本项目的实施不仅可以建立可控制备SnS、SnSe和SnSxSe1-x低维纳米材料的新方法，而且能够加深对高压下层状半导体纳米材料的晶体结构与物理性能的认知，为高压科学与纳米材料科学交叉研究提供新思路。

中文关键词： 高压；硫化锡；硒化锡；纳米材料；高压相变

英文摘要： Tin(II) sulfide (SnS) and tin(II) selenide (SnSe) is an important binary IV–VI semiconductor compound with a wide range of potential applications such as infrared optoelectronic devices, anode materials for rechargeable lithium batteries, solar cell and thermoelectric/Photoelectric property. In this project, low-dimensional SnS, SnSe and SnSxSe1-x with tunable diameter and morphology will be synthesised by plasma-assisted arc discharge method. On this basis, the high-pressure behavior of SnS, SnSe and SnSxSe1-x with different size and morphology will be investigated by angle-dispersive synchrotron powder X-ray diffraction, Raman spectroscopy techniques, fluorescence spectroscopy in a diamond anvil cell. Using high pressure tools, we can investigate the influencing factors on the structure, band gap, optics and eletronic behavior of layered sructure semiconductor nanomaterials in terms of atomic interaction, reveal the effects of morphologies and sizes on high pressure structure Stability and phase transitions regularity. Through this project, it can not only be expected that this technique should be applicable for the controllable synthesis of SnS、SnSe、SnSxSe1-x nanomaterials, but also improve our understanding about physics properties of layered structure semiconductor under high pressure. Our project will play a positive role in promoting the crossover study of high pressure science and nanomaterial science.

英文关键词： high pressure;SnS;SnSe;nanomaterials;hihg pressure phase transition