Modern computing systems are embracing non-volatile memory (NVM) to implement high-capacity and low-cost main memory. Elevated operating voltages of NVM accelerate the aging of CMOS transistors in the peripheral circuitry of each memory bank. Aggressive device scaling increases power density and temperature, which further accelerates aging, challenging the reliable operation of NVM-based main memory. We propose HEBE, an architectural technique to mitigate the circuit aging-related problems of NVM-based main memory. HEBE is built on three contributions. First, we propose a new analytical model that can dynamically track the aging in the peripheral circuitry of each memory bank based on the bank's utilization. Second, we develop an intelligent memory request scheduler that exploits this aging model at run time to de-stress the peripheral circuitry of a memory bank only when its aging exceeds a critical threshold. Third, we introduce an isolation transistor to decouple parts of a peripheral circuit operating at different voltages, allowing the decoupled logic blocks to undergo long-latency de-stress operations independently and off the critical path of memory read and write accesses, improving performance. We evaluate HEBE with workloads from the SPEC CPU2017 Benchmark suite. Our results show that HEBE significantly improves both performance and lifetime of NVM-based main memory.
翻译:现代计算机系统正在采用非挥发性记忆(NVM)来实施高容量和低成本主记忆(NVM),以实施高容量和低成本的主要记忆(NVM),NVM的升级操作电压加速了每个记忆库外围电路中CMOS晶体管的老化。侵略性装置的缩放提高了电密度和温度,进一步加速了NVM主记忆(NVM)的可靠运行。我们建议HEBE(HEBE)是一种旨在减轻NVM主记忆(NVM)电路老化相关问题的建筑技术。HEBE(HEBE)是建立在三种贡献基础上的。首先,我们提出了一个新的分析模型,能够根据银行的利用情况,动态地跟踪每个记忆库外围电路电路的老化变化。第二,我们开发了一个智能的记忆请求表仪,利用这一老化模型来减轻NVMM主记忆库外围电路的电路的可靠运行。第三,我们引入了一种隔离式收发器,在不同的电路上运行的离20的电路部分,允许解逻辑块根据银行的每个记忆库的周边电路进行长期电路的老化, 并独立地改进了CEPEB(SEB)测试)的运行的运行的运行。