Phase-change memory (PCM) is a scalable and low latency non-volatile memory (NVM) technology that has been proposed to serve as storage class memory (SCM), providing low access latency similar to DRAM and often approaching or exceeding the capacity of SSD. The multilevel property of PCM also enables its adoption in neuromorphic systems to build high-density synaptic storage. We investigate and describe two significant bottlenecks of a PCM system. First, writing to PCM cells incurs significantly higher latency and energy penalties than reading its content. Second, high operating voltages of PCM impacts its reliable operations. In this work, we propose methodologies to tackle the bottlenecks, improving performance, reliability, energy consumption, and sustainability for a PCM system.
翻译:阶段变化内存(PCM)是一种可缩放的低长期非挥发性内存(NVM)技术,建议用作存储级非挥发性内存(SCM),提供类似于DRAM的低存取时间,而且往往接近或超过SSD的容量。PCM的多层特性还使它在神经形态系统中被采纳,以建立高密度合成储存。我们调查并描述了PCM系统的两个重大瓶颈。首先,向PCM细胞写信比阅读其内容要长得多,而且受到的能源惩罚要高得多。第二,PCM的高运作电压影响其可靠的运作。在这项工作中,我们提出了解决瓶颈、改进性能、可靠性、能源消耗以及PCM系统可持续性的方法。