长寿命氮化镓基蓝光激光器关键科学与技术问题研究

项目名称： 长寿命氮化镓基蓝光激光器关键科学与技术问题研究

项目编号： No.61334005

项目类型： 重点项目

立项/批准年度： 2014

项目学科： 无线电电子学、电信技术

项目作者： 张书明

作者单位： 中国科学院苏州纳米技术与纳米仿生研究所

项目金额： 300万元

中文摘要： 氮化镓基（GaN）蓝光激光器在信息传输、获取、处理、存储和显示等方面有重大需求和广泛应用。本课题将研究GaN基激光器的受激辐射行为和物理机制；建立理论模型研究GaN基激光器的电学特性和发光特性；在GaN紫光激光器的基础上，设计新型GaN蓝光激光器结构，降低p型层中的光损耗；研究量子阱生长过程中缺陷的抑制及减小极化效应方法，实现高效率的量子阱；研究P型AlGaN中的补偿机制，实现高效率P型掺杂；采用隧道结结构或InGaN/GaN表面接触层，制备性能优异的欧姆接触电极；设计解理导向槽，改善激光器解理腔面质量和可靠性，采用纳米银焊料增强激光器的散热；研究激光器中强光场、电场与半导体材料的及掺杂元素的相互作用机制，解决激光器的可靠性问题，最终突破氮化镓基蓝光激光器关键科学和技术问题，研制成功寿命大于5000小时，输出功率大于500mW的蓝光激光器。

中文关键词： 受激辐射;氮化镓基激光器;量子阱;P型掺杂;失效

英文摘要： GaN-based blue laser diodes have been widely used in the information transmission, acquiring, processing, storage and display. This subject will study the behavior and physical mechanisms of stimulated emission, establish a theoretical model of the electrical and optical characteristics of GaN-based laser diodes, optimize the structure of blue laser diodes based on violet laser diodes to reduce absorption loss of p-type layers, study the defect inhibition in the growth process of quantum wells and method of reducing polarization effect to achieve high efficient quantum wells, investigate the compensation mechanism of p-type AlGaN to achieve high efficiency of p-type doping, and develop low-resistance ohmic contact by tunneling junction or InGaN/GaN contact layers. In addition, it will also improve quality and reliability of the cavity facet by cleave-guided groove, enhance heat dissipation by using nano-silver solder, and investigate interaction mechanisms between light field, electrical field, and materials, to resolve problems of reliability in GaN-based blue laser diodes. Finally, we will solve the key scientific and technical problems of GaN-based blue laser diodes, and achieve high-power and long-lifetime blue laser diodes, the power is greater than 500mW, and the lifetime is longer than 5000 hours.

英文关键词： stimulated emission;GaN-based laser diodes;quantumn well;P-type doping;failure